DocumentCode :
1804366
Title :
High performance power MOSFET SPICE macromodel
Author :
Maxim, Adrian ; Andreu, Danielle ; Boucher, Jacques
Author_Institution :
Dept. of Electron., Tech. Univ. Gh. Asachi, Iasi, Romania
Volume :
2
fYear :
1997
fDate :
7-11 Jul 1997
Firstpage :
189
Abstract :
This paper presents a new method of SPICE, behavioral macromodeling of power MOSFETs, that describes device´s internal static equations directly with “in line equation” controlled voltage and current sources and the nonlinear interelectrode capacitances are piece-wise-linear approximated with “table defined” controlled sources. The thermal variation of model parameters are equally considered. This new macromodel gives a higher accuracy of static and dynamic power MOSFET description, with no convergence problems and with a reasonable analysis time
Keywords :
SPICE; circuit analysis computing; equivalent circuits; piecewise-linear techniques; power MOSFET; semiconductor device models; SPICE macromodel; analysis time; behavioral macromodeling; controlled sources; convergence; in-line equation; internal static equations; nonlinear interelectrode capacitances; piecewise-linear approximation; power MOSFETs; thermal variations; Algorithm design and analysis; Analytical models; Capacitance; Curve fitting; Dynamic programming; IEEE catalog; MOSFET circuits; Power MOSFET; SPICE; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, 1997. ISIE '97., Proceedings of the IEEE International Symposium on
Conference_Location :
Guimaraes
Print_ISBN :
0-7803-3936-3
Type :
conf
DOI :
10.1109/ISIE.1997.648931
Filename :
648931
Link To Document :
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