High performance power MOSFET SPICE macromodel

Author

Maxim, Adrian ; Andreu, Danielle ; Boucher, Jacques

Author_Institution

Dept. of Electron., Tech. Univ. Gh. Asachi, Iasi, Romania

Volume

2

fYear

1997

fDate

7-11 Jul 1997

Firstpage

189

Abstract

This paper presents a new method of SPICE, behavioral macromodeling of power MOSFETs, that describes device´s internal static equations directly with “in line equation” controlled voltage and current sources and the nonlinear interelectrode capacitances are piece-wise-linear approximated with “table defined” controlled sources. The thermal variation of model parameters are equally considered. This new macromodel gives a higher accuracy of static and dynamic power MOSFET description, with no convergence problems and with a reasonable analysis time

Keywords

SPICE; circuit analysis computing; equivalent circuits; piecewise-linear techniques; power MOSFET; semiconductor device models; SPICE macromodel; analysis time; behavioral macromodeling; controlled sources; convergence; in-line equation; internal static equations; nonlinear interelectrode capacitances; piecewise-linear approximation; power MOSFETs; thermal variations; Algorithm design and analysis; Analytical models; Capacitance; Curve fitting; Dynamic programming; IEEE catalog; MOSFET circuits; Power MOSFET; SPICE; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 1997. ISIE '97., Proceedings of the IEEE International Symposium on

Conference_Location

Guimaraes

Print_ISBN

0-7803-3936-3

Type

conf

DOI

10.1109/ISIE.1997.648931

Filename

648931