Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs

Author

Sasso, Grazia ; Maneux, Cristell ; Boeck, Josef ; d´Alessandro, Vincenzo ; Aufinger, Klaus ; Zimmer, T. ; Rinaldi, Niccolo

Author_Institution

Dept. of Electr. Eng. & Inf. Technol., Univ. of Naples Federico II, Naples, Italy

fYear

2014

fDate

19-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Hot-carrier degradation analysis and modeling of 240/380 GHz fT/fMAX SiGe HBTs are addressed. A proper stress bias setup is proposed, suitable for the evaluation of RF performance during stress interruption. The impact of stress conditions, lateral scaling and device layout is discussed. An analytical model is proposed, which predicts base current degradation, including its dependence upon stress voltage, stress duration, and emitter geometry, and contributes to understand the physical background of the phenomena.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; hot carriers; microwave transistors; semiconductor device models; stress effects; HBT; SiGe; base current degradation; device layout; emitter geometry; frequency 240 GHz; frequency 380 GHz; heterojunction bipolar transistors; hot-carrier degradation analysis; stress bias setup; stress duration; stress interruption; voltage stress-induced hot carrier effects; Degradation; Geometry; Hot carriers; Performance evaluation; Radio frequency; Silicon germanium; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE

Conference_Location

La Jolla, CA

Type

conf

DOI

10.1109/CSICS.2014.6978552

Filename

6978552