Title :
Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs
Author :
Sasso, Grazia ; Maneux, Cristell ; Boeck, Josef ; d´Alessandro, Vincenzo ; Aufinger, Klaus ; Zimmer, T. ; Rinaldi, Niccolo
Author_Institution :
Dept. of Electr. Eng. & Inf. Technol., Univ. of Naples Federico II, Naples, Italy
Abstract :
Hot-carrier degradation analysis and modeling of 240/380 GHz fT/fMAX SiGe HBTs are addressed. A proper stress bias setup is proposed, suitable for the evaluation of RF performance during stress interruption. The impact of stress conditions, lateral scaling and device layout is discussed. An analytical model is proposed, which predicts base current degradation, including its dependence upon stress voltage, stress duration, and emitter geometry, and contributes to understand the physical background of the phenomena.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; hot carriers; microwave transistors; semiconductor device models; stress effects; HBT; SiGe; base current degradation; device layout; emitter geometry; frequency 240 GHz; frequency 380 GHz; heterojunction bipolar transistors; hot-carrier degradation analysis; stress bias setup; stress duration; stress interruption; voltage stress-induced hot carrier effects; Degradation; Geometry; Hot carriers; Performance evaluation; Radio frequency; Silicon germanium; Stress;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978552
