Title :
Microfluidic Heat Exchangers for High Power Density GaN on SiC
Author :
Yoonjin Won ; Houshmand, Farzad ; Agonafer, Damena ; Asheghi, Mehdi ; Goodson, Kenneth E.
Author_Institution :
Mech. Eng. Dept., Stanford Univ., Stanford, CA, USA
Abstract :
The high power densities targeted for GaN HEMT on SiC technology can dramatically increase the performance of radar systems. The increasing power will require improved heat removal technologies associated with conduction and convection. Here we explore combined cooling technologies based on SiC substrate and SiC or Cu microstructures, which improve the thermal performance of high power devices.
Keywords :
III-V semiconductors; convection; cooling; copper; gallium compounds; heat exchangers; high electron mobility transistors; microfluidics; silicon compounds; wide band gap semiconductors; Cu; Cu microstructures; GaN; GaN HEMT; SiC; SiC substrate; SiC technology; conduction; convection; heat removal technology; high power density; microfluidic heat exchangers; radar systems; thermal performance; Cooling; Gallium nitride; Heat transfer; Heating; Microchannels; Silicon carbide; Substrates;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978568
