DocumentCode
180469
Title
Miniaturization of Ka-Band High Power Amplifier by 0.15 ??m GaN MMIC Technology
Author
Kong, Kris ; Ming-Yih Kao ; Nayak, Shriguru
Author_Institution
TriQuint Semicond. Texas, Richardson, TX, USA
fYear
2014
fDate
19-22 Oct. 2014
Firstpage
1
Lastpage
4
Abstract
We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.
Keywords
III-V semiconductors; MMIC power amplifiers; gallium compounds; millimetre wave power amplifiers; wide band gap semiconductors; GaAs; GaAs power amplifiers; GaN; GaN MMIC technology; Ka-band high power amplifier; SiC; SiC substrate technology; frequency 30 GHz; millimeter-wave market; size 0.15 mum; size 50 mum; Field effect transistors; Gallium arsenide; Gallium nitride; High power amplifiers; MMICs; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location
La Jolla, CA
Type
conf
DOI
10.1109/CSICS.2014.6978569
Filename
6978569
Link To Document