Title :
Miniaturization of Ka-Band High Power Amplifier by 0.15 ??m GaN MMIC Technology
Author :
Kong, Kris ; Ming-Yih Kao ; Nayak, Shriguru
Author_Institution :
TriQuint Semicond. Texas, Richardson, TX, USA
Abstract :
We demonstrate a compact and efficient Ka-band high power amplifier with output power of 34.5dBm at 30 GHz by using 0.15 μm GaN technology. This paper reports record compact area of 2.38 mm^2 in a Ka-band high power amplifier (HPA) class. We employed 0.15 μm GaN process on 50 μm thick SiC substrate technology to achieve high output power with high efficiency and compact design. The advantage of a GaN PA in commercial millimeter-wave market is illustrated by comparing it to similar GaAs power amplifiers.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; millimetre wave power amplifiers; wide band gap semiconductors; GaAs; GaAs power amplifiers; GaN; GaN MMIC technology; Ka-band high power amplifier; SiC; SiC substrate technology; frequency 30 GHz; millimeter-wave market; size 0.15 mum; size 50 mum; Field effect transistors; Gallium arsenide; Gallium nitride; High power amplifiers; MMICs; Power generation;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE
Conference_Location :
La Jolla, CA
DOI :
10.1109/CSICS.2014.6978569
