Title :
A 65nm CMOS current controlled oscillator with high tuning linearity for wideband polar modulation
Author :
Tang, Yiwu ; Hu, Jianyun ; Park, Jongmin ; Choi, Jaehyouk ; Leung, Lincoln ; Narathong, Chiewcharn ; Sahota, Kamal
Author_Institution :
Qualcomm Inc., San Diego, CA, USA
Abstract :
A highly linear oscillator is presented for wideband polar modulation. It has both varactor voltage tuning for frequency locking and temperature compensation as well as inductive current tuning for linear phase modulation. Implemented in 65nm CMOS, it achieved a gain variation less than ±2% over more than 32MHz range meeting WCDMA polar modulation requirement. At 3.8GHz and 3MHz offset, its phase noise is -136.5dBc/Hz with current consumption of 18mA from 2.1V supply.
Keywords :
CMOS integrated circuits; modulation; oscillators; varactors; CMOS current controlled oscillator; current 18 mA; frequency 3 MHz; frequency 3.8 GHz; frequency locking; high tuning linearity; inductive current tuning; linear phase modulation; size 65 nm; temperature compensation; varactor voltage tuning; voltage 2.1 V; wideband polar modulation; Inductors; Linearity; Modulation; Multiaccess communication; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1555-5
Electronic_ISBN :
0886-5930
DOI :
10.1109/CICC.2012.6330598
