Model Development for Monolithically-Integrated E/D-Mode Millimeter-Wave InAlN/AlN/GaN HEMTs

Author

Jun Ren ; Bo Song ; Xing, Huili Grace ; Shuoqi Chen ; Ketterson, Andrew ; Beam, Edward ; Tso-Min Chou ; Pilla, Manyam ; Hua-Quen Tserng ; Xiang Gao ; Saunier, Paul ; Fay, Patrick

Author_Institution

Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2014

fDate

19-22 Oct. 2014

Firstpage

1

Lastpage

4

Abstract

Device models to support circuit design efforts using monolithically-integrated enhancement- and depletion-mode high-speed InAlN/AlN/GaN HEMTs are reported. Physically- motivated modifications to the conventional empirical compact models have been included to enhance model accuracy over bias and temperature. The models have been extracted from DC through 110 GHz at baseplate temperatures from 25 °C through 100 °C; good agreement is obtained between measurement results and the extracted model.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave transistors; semiconductor device models; wide band gap semiconductors; InAlN-AlN-GaN; circuit design; depletion-mode; empirical compact models; enhancement-mode; frequency 110 GHz; high-speed InAlN-AlN-GaN HEMT; millimeter wave HEMT; monolithically-integrated E-D-mode HEMT; physically motivated modifications; Current measurement; Gallium nitride; HEMTs; Logic gates; MODFETs; Semiconductor device modeling; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE

Conference_Location

La Jolla, CA

Type

conf

DOI

10.1109/CSICS.2014.6978570

Filename

6978570