Title :
Special 10kV solid state power modulator for plasma immersion ion implantation treatment of industrial bearings
Author :
Tang, B.Y. ; Wang, L.P. ; Chu, P.K. ; Gan, K.Y. ; Wang, X.F. ; Wang, S.Y.
Author_Institution :
City Univ. of Hong Kong, Kowloon, China
Abstract :
Summary form only given. We have recently developed a 10kV solid state power modulator for the processing of industrial bearings by plasma immersion ion implantation. According to our research results, high energy implantation is not preferred in the treatment of industrial bearings because of the geometry of the races, and a dedicated and less expensive power supply will suffice. In our new design, optical communication modules are used to synchronize the control pulse of each IGBT and a new method is used to generate power for the IGBT gate drive in the solid state modulator In addition to a maximum voltage of 10kV, our inexpensive power modulator can output pulses 2 to 100 microseconds in duration with a rise time of 2 microseconds. The maximum pulsing frequency is 2kHz. We will present the details of the design and the experimental results in this paper.
Keywords :
insulated gate bipolar transistors; ion implantation; modulators; plasma materials processing; pulsed power supplies; 10 kV; 2 kHz; 2 to 100 ms; IGBT gate drive; control pulse; high energy implantation; industrial bearings; insulated gate bipolar transistors; l0kV state power modulator; maximum voltage; optical communication modules; output pulses; plasma immersion ion implantation treatment; power supply; pulsing frequency; solid state modulator; solid state power modulator; Electricity supply industry; Geometrical optics; Insulated gate bipolar transistors; Optical design; Optical pulse generation; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Pulse modulation; Solid state circuits;
Conference_Titel :
Pulsed Power Plasma Science, 2001. IEEE Conference Record - Abstracts
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7141-0
DOI :
10.1109/PPPS.2001.961184