Title :
Solid materials subjected to partial-discharge activity in pure SF 6 and mixtures with CF4
Author :
Frechette, M.F. ; Trudeau, M. ; Larocque, R.Y.
Author_Institution :
Dept. of Technol. Emergentes, Recherche et Dev., IREQ, Varennes, Que., Canada
Abstract :
This work aimed at characterizing the surface modifications of solid materials, when subjected to partial discharges in SF6/CF4. Samples of high-purity copper and Teflon were used. The experiment was conducted under negative DC, producing negative corona-discharge conditions. The gas pressures ranged from 300 to 400 kPa, and SF6/CF4 mixtures containing 50% of CF4 were utilized. Corona currents were varied as well as the exposure time of the samples. X-ray photoelectron spectroscopy (XPS) was used for characterizing the bulk sample surface. On-line sampling of the gas was done throughout. In both dealing with pure SF6 and the mixture, it was experimentally found that SOF2 and SO2F2 were the predominant by-products. Surface modifications were qualitatively detected for both the conductor and insulating materials. The gas medium used in the discharge brought about some differences. In particular, in presence of SF6/CF4 , less oxygen and sulfur were detected on the discharged surface
Keywords :
SF6 insulation; X-ray photoelectron spectra; composite insulating materials; copper; corona; gas mixtures; partial discharges; plastics; surface chemistry; 300 to 400 kPa; Cu; HV circuit breakers; SF6; SF6/CF4; SO2F2; SOF2; Teflon; X-ray photoelectron spectroscopy; conducting material; corona currents; gas pressure range; high-purity Cu; insulating material; negative DC; negative corona-discharge conditions; on-line gas sampling; partial discharges; solid materials; surface modifications; tetrafluoromethane; Chemistry; Conducting materials; Copper; Electrodes; Insulation; Partial discharges; Solids; Sparks; Sulfur hexafluoride; Surface discharges;
Conference_Titel :
Electrical Insulation, 1998. Conference Record of the 1998 IEEE International Symposium on
Conference_Location :
Arlington, VA
Print_ISBN :
0-7803-4927-X
DOI :
10.1109/ELINSL.1998.704730