Phase Change Memory: Scaling and applications

Author

Jeyasingh, Rakesh ; Liang, Jiale ; Caldwell, Marissa A. ; Kuzum, Duygu ; Wong, H. S Philip

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2012

fDate

9-12 Sept. 2012

Firstpage

1

Lastpage

7

Abstract

Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has been demonstrated using novel applications of nanofabrication techniques. PCM devices using solution-processed GeTe nanoparticles of diameter range 1.8-3.4nm has been demonstrated. Highly scaled (<;2nm) PCM cross-point device using carbon nanotube as the electrode is fabricated proving the scalability of PCM to ultra small dimensions. The use of PCM as a nanoelectronic synapse for neuromorphic computation is also demonstrated as an illustration of PCM application beyond digital memory.

Keywords

carbon nanotubes; germanium compounds; nanofabrication; nanoparticles; phase change memories; GeTe; PCM cross-point device; carbon nanotube; digital memory; electrode; nanoelectronic synapse; nanofabrication techniques; neuromorphic computation; nonvolatile memory applications; phase change memory technology; size 1.8 nm to 3.4 nm; size 10 nm; solution-processed nanoparticles; Computer architecture; Electrodes; Microprocessors; Nanoparticles; Neurons; Phase change materials; Programming;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2012 IEEE

Conference_Location

San Jose, CA

ISSN

0886-5930

Print_ISBN

978-1-4673-1555-5

Electronic_ISBN

0886-5930

Type

conf

DOI

10.1109/CICC.2012.6330621

Filename

6330621