• DocumentCode
    1805547
  • Title

    NAND FLASH based three-tier fault-tolerant storage strategy

  • Author

    Jian Song ; Bing He

  • Author_Institution
    State Key Laboratory of Virtual Reality Technology and Systems, Beihang University, Beijing, 100191, China
  • fYear
    2013
  • fDate
    1-8 Jan. 2013
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper proposes a NAND FLASH based three-tier fault-tolerant storage strategy. Based on the hardware properties of NAND FLASH, the strategy is to add corresponding strategies according to different levels, to improve the fault tolerance capacity of NAND FLASH effectively, and to provide higher security for the stored data. Designed with experimental analysis under the condition of high demand for data security in this paper, it can be seen that the strategy can provide higher fault tolerance capacity.
  • Keywords
    Error correction codes; Fault tolerance; Fault tolerant systems; Flash memories; Lead; Manganese; NAND FLASH; fault-tolerant; storage strategy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conference Anthology, IEEE
  • Conference_Location
    China
  • Type

    conf

  • DOI
    10.1109/ANTHOLOGY.2013.6784969
  • Filename
    6784969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1805547