Title :
NAND FLASH based three-tier fault-tolerant storage strategy
Author :
Jian Song ; Bing He
Author_Institution :
State Key Laboratory of Virtual Reality Technology and Systems, Beihang University, Beijing, 100191, China
Abstract :
This paper proposes a NAND FLASH based three-tier fault-tolerant storage strategy. Based on the hardware properties of NAND FLASH, the strategy is to add corresponding strategies according to different levels, to improve the fault tolerance capacity of NAND FLASH effectively, and to provide higher security for the stored data. Designed with experimental analysis under the condition of high demand for data security in this paper, it can be seen that the strategy can provide higher fault tolerance capacity.
Keywords :
Error correction codes; Fault tolerance; Fault tolerant systems; Flash memories; Lead; Manganese; NAND FLASH; fault-tolerant; storage strategy;
Conference_Titel :
Conference Anthology, IEEE
Conference_Location :
China
DOI :
10.1109/ANTHOLOGY.2013.6784969