DocumentCode :
1805859
Title :
The electron temperature in nanostructures subjected to a high electric field
Author :
Arora, Vijay K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wilkes Univ., Wilkes-Barre, PA, USA
fYear :
2002
fDate :
19-21 Dec. 2002
Firstpage :
1
Lastpage :
8
Abstract :
The drift-diffusion characteristics that limit the drift velocity to thermal velocity, appropriate to the dimensionality of nanostructures, are described. The concept of a hot electron and its temperature in a given context is discussed and simple analytical expressions extracted. These contextual definitions include: energy temperature, mobility temperature, Einstein-relation temperature both under ac and dc conditions, quantum temperature, and two-band intrinsic temperature. The dependence on the electric field is given in each case and the role of electric-field-induced quantum emission is delineated.
Keywords :
electromigration; electron mobility; high field effects; hot carriers; nanostructured materials; quantum wells; Einstein-relation temperature; drift diffusion; drift velocity; electric field induced quantum emission; electron temperature; energy temperature; high electric field effect; hot electron; mobility temperature; nanostructure dimensionality; thermal velocity; Diffusion processes; Electric fields; Electromagnetic scattering; Electron mobility; Entropy; Nanostructures; Optical scattering; Particle scattering; Temperature; Thermal engineering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
Type :
conf
DOI :
10.1109/SMELEC.2002.1217764
Filename :
1217764
Link To Document :
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