DocumentCode :
1805905
Title :
A self-aligned InP/InGaAs/InP DHBT with hexagonal-shaped emitters
Author :
Zhao, Yan ; Zhang, Zheng ; Gao, Jianfeng
Author_Institution :
Nat. Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing Electron. Devices Inst., Nanjing
Volume :
2
fYear :
2008
fDate :
21-24 April 2008
Firstpage :
551
Lastpage :
553
Abstract :
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) have been successfully fabricated using self-aligned process with hexagonal-shaped emitters. DHBTs with dimensions of 1x10 mum have demonstrated a peak cutoff frequency fT of 170GHz. Typical BVCEO exceeds 8V.
Keywords :
amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; InP-InGaAs; double heterojunction bipolar transistor; frequency 170 GHz; hexagonal-shaped emitter; self-aligned process; DH-HEMTs; Differential amplifiers; Etching; Heterojunction bipolar transistors; High power amplifiers; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; Optical amplifiers; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1879-4
Electronic_ISBN :
978-1-4244-1880-0
Type :
conf
DOI :
10.1109/ICMMT.2008.4540451
Filename :
4540451
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1805905
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