Title :
a-Si:H back-plane electronics for medical imaging and OLED displays
Author :
Nathan, Arokia ; Sakariya, Kapil ; Karim, Karim S. ; Servati, Peyman ; Kumar, Anil ; Striakhilev, Denis
Author_Institution :
Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
This paper reviews design considerations along with measurement results pertinent to amorphous silicon (a-Si:H) circuits for active matrix flat panel imagers (AMFPI) and active matrix organic light emitting diode (AMOLED) displays. We describe both pixel architectures and thin film transistor (TFT) circuit topologies that are amenable for vertically integrated, high aperture ratio or high fill factor pixels. Here, the OLED or detector layers are integrated directly above the TFT circuit layer, to provide an active pixel area that is at least 80% of the total pixel area with an aperture ratio or fill factor that remains virtually independent of scaling. Integration of on-panel gate drivers is also presented where we discuss an a-Si:H based gate de-multiplexer architecture that is threshold voltage shift invariant.
Keywords :
LED displays; amorphous semiconductors; biomedical imaging; demultiplexing equipment; elemental semiconductors; flat panel displays; hydrogen; organic light emitting diodes; silicon; thin film transistors; OLED displays; Si:H; active matrix flat panel imagers; active matrix organic light emitting diode displays; amorphous Si:H back plane electronics; amorphous Si:H based gate demultiplexer architecture; amorphous silicon circuits; aperture ratio; fill factor pixels; medical imaging; on-panel gate driver integration; pixel architectures; thin film transistor circuit topologies; threshold voltage shift invariant; Active matrix organic light emitting diodes; Amorphous silicon; Apertures; Biomedical imaging; Circuit topology; Detectors; Flat panel displays; Integrated circuit measurements; Organic light emitting diodes; Thin film transistors;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217766
