Power p-i-n diode modeling using SPICE

Author

Aruajo, A. ; Carvalho, Adriano ; De Carvalho, J. L Martins

Author_Institution

Fac. de Engenharia, Porto Univ., Portugal

Volume

2

fYear

1997

fDate

7-11 Jul 1997

Firstpage

211

Abstract

A physics based model for the power p-i-n diode is implemented into the general circuit simulation package SPICE. This model based on a variational formulation and finite element solution of the semiconductor equations accurately describes the forward and reverse recovery as well as the conduction behaviour. The procedure used to implement the resulting model into SPICE is described. The simulations are finally compared with known experiments for demonstration of its effectiveness

Keywords

SPICE; circuit analysis computing; finite element analysis; p-i-n diodes; power semiconductor diodes; semiconductor device models; variational techniques; SPICE; circuit simulation package; computer simulation; conduction behaviour; finite element solution; forward recovery; power p-i-n diode modeling; reverse recovery; semiconductor equations; variational formulation; Charge carrier processes; Circuit simulation; Electron mobility; Equations; Finite element methods; P-i-n diodes; SPICE; Semiconductor diodes; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 1997. ISIE '97., Proceedings of the IEEE International Symposium on

Conference_Location

Guimaraes

Print_ISBN

0-7803-3936-3

Type

conf

DOI

10.1109/ISIE.1997.648937

Filename

648937