• DocumentCode
    1806062
  • Title

    Hydrogen gas production for electronic-grade polycrystalline silicon growth

  • Author

    Ismail, Hashim ; Hashi, Uda ; Ehsan, Abang Annuar

  • Author_Institution
    Technol. Park Malaysia, MIMOS Berhad, Kuala Lumpur, Malaysia
  • fYear
    2002
  • fDate
    19-21 Dec. 2002
  • Firstpage
    53
  • Lastpage
    56
  • Abstract
    The production of polycrystalline silicon (polysilicon) requires several main feedstocks. Polysilicon is produced by the reaction of trichlorosilane, SiHCl3 (TCS) with hydrogen, H2. Trichlorosilane is produced in the TCS plant while hydrogen is produced in H2 plant. Hydrogen and oxygen can be produced from water using electricity through the process of electrolysis. The purification or rectification of the H2 gas is typically done by passing an impure H2 stream over a heated palladium (Pd) alloy. The purity of H2 is then tested using a laboratory-constructed hydrogen gas purity test method which has been found to be at 99.9%.
  • Keywords
    chemical industry; chemical vapour deposition; crystal growth; electrolysis; elemental semiconductors; gas industry; gases; hydrogen; hydrogen economy; oxygen; purification; semiconductor growth; silicon; H2; H2 gas; O2; Si; electricity; electrolysis; electronic grade polycrystalline silicon growth; feedstocks; hydrogen gas production; laboratory constructed hydrogen gas purity test; oxygen gas; purification; rectification; Biomembranes; Chemical vapor deposition; Electrochemical processes; Electrons; Hydrogen; Partial discharges; Production; Raw materials; Semiconductor devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
  • Print_ISBN
    0-7803-7578-5
  • Type

    conf

  • DOI
    10.1109/SMELEC.2002.1217774
  • Filename
    1217774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1806062