• DocumentCode
    1806673
  • Title

    38 GHz low-power static frequency divider in SiGe bipolar technology

  • Author

    Ritzberger, Günter ; Böck, Josef ; Knapp, Herbert ; Treitinger, Ludung ; Scholtz, Arpad L.

  • Author_Institution
    Infineon Technol. AG, Munich, Germany
  • Volume
    4
  • fYear
    2002
  • fDate
    2002
  • Abstract
    A low-power static frequency divider manufactured in 0.4 μm/85 GHz-fT SiGe bipolar technology with division ratios of 16 and 256 is presented. The circuit is optimized for low power consumption and operates up to 38.9 GHz maximum input frequency consuming only 174 mW from the 3 V supply.
  • Keywords
    Ge-Si alloys; MMIC frequency convertors; bipolar MMIC; circuit optimisation; frequency dividers; integrated circuit design; low-power electronics; 0.4 micron; 174 mW; 3 V; 38.9 GHz; SiGe; SiGe bipolar technology; circuit design; circuit optimization; division ratios; low power consumption; low-power static frequency divider; maximum input frequency; CMOS technology; Flip-flops; Frequency conversion; Frequency synthesizers; Germanium silicon alloys; Manufacturing; Master-slave; Mobile communication; Phase locked loops; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
  • Print_ISBN
    0-7803-7448-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2002.1010479
  • Filename
    1010479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1806673