DocumentCode
1807153
Title
IPF: In-Place X-Filling to Mitigate Soft Errors in SRAM-Based FPGAs
Author
Feng, Zhe ; Jing, Naifeng ; Chen, Gengsheng ; Hu, Yu ; He, Lei
Author_Institution
Electr. Eng. Dept., Univ. of California, Los Angeles, CA, USA
fYear
2011
fDate
5-7 Sept. 2011
Firstpage
482
Lastpage
485
Abstract
SRAM-based Field Programmable Gate Arrays (FPGAs) are vulnerable to Single Event Upsets (SEUs). We show that a large portion (40%-60% for the circuits in our experiments) of the total used LUT configuration bits are don´t care bits, and propose to decide the logic values of don´t care bits such that soft errors are reduced. Our approaches are efficient and do not change LUT level placement and routing. Therefore, they are suitable for design closure. For the ten largest combinational MCNC benchmark circuits mapped for 6-LUTs, our approaches obtain 20% chip level Mean Time To Failure (MTTF) improvements, compared to the baseline mapped by Berkeley ABC mapper. They obtain 3× more chip level MTTF improvements and are 128× faster when compared to the existing best in-place IPD algorithm.
Keywords
SRAM chips; field programmable gate arrays; network routing; Berkeley ABC mapper; LUT level placement; LUT routing; SRAM-Based FPGA; chip level mean time to failure improvements; design closure; dont care bits; field programmable gate arrays; in-place x-filling; logic values; single event upsets; soft error mitigation; Field programmable gate arrays; Helium; Integrated circuit interconnections; Integrated circuit reliability; Observability; Table lookup; SRAM-based FPGA; don´t care; in-place; mitigation; soft error;
fLanguage
English
Publisher
ieee
Conference_Titel
Field Programmable Logic and Applications (FPL), 2011 International Conference on
Conference_Location
Chania
Print_ISBN
978-1-4577-1484-9
Electronic_ISBN
978-0-7695-4529-5
Type
conf
DOI
10.1109/FPL.2011.95
Filename
6044868
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