Title :
A new method of designing MEMS class E amplifier
Author :
Gu, H.M. ; Gao, B.X. ; Liang, C.G.
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
This paper presents the design and fabrication of metal contact MEMS switches for high efficiency Class E amplifier application. The efficiency of the amplifier is 64.3%, which agrees well with the simulation result. With properly selecting the metal contact MEMS switch, the amplifier efficiency may reach up to 99%. To our knowledge, this result presents the first published performance of Class-E amplifier using MEMS switch.
Keywords :
amplifiers; microswitches; amplifier efficiency; designing MEMS class E amplifier; metal contact MEMS switches; Contacts; Design methodology; Fabrication; Frequency; Micromechanical devices; Microswitches; Power amplifiers; Silicon; Switches; Voltage;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217820
