DocumentCode
1807219
Title
Lithography and design integration — New paradigm for the technology architecture development
Author
Kye, Jongwook ; Ma, Yuansheng ; Yuan, Lei ; Deng, Yunfei ; Levinson, Harry
Author_Institution
GLOBALFOUNDRIES, Sunnyvale, CA, USA
fYear
2012
fDate
9-12 Sept. 2012
Firstpage
1
Lastpage
4
Abstract
This paper proposes a new paradigm for coordination of lithography and design at advanced technology nodes. Growing complexity of technology without any lithography pitch reduction (knowing that we don´t have any imminent lens NA or wavelength improvement) we need to challenge node to node scaling more than any time before. To achieve an appropriate scale factor for 20nm and beyond it is necessary to introduce double patterning. We are going to explain how we change our landscape.
Keywords
lithography; advanced technology nodes; design integration; double patterning; lens NA; lithography pitch reduction; node to node scaling; scale factor; technology architecture development; wavelength improvement; Color; Complexity theory; Computer architecture; Image color analysis; Libraries; Lithography; Metals; Design Technology Co-Optimization (DTCO); Lithography; Lithography Design Integration; Restricted Design Rules (RDR);
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location
San Jose, CA
ISSN
0886-5930
Print_ISBN
978-1-4673-1555-5
Electronic_ISBN
0886-5930
Type
conf
DOI
10.1109/CICC.2012.6330685
Filename
6330685
Link To Document