DocumentCode :
1807219
Title :
Lithography and design integration — New paradigm for the technology architecture development
Author :
Kye, Jongwook ; Ma, Yuansheng ; Yuan, Lei ; Deng, Yunfei ; Levinson, Harry
Author_Institution :
GLOBALFOUNDRIES, Sunnyvale, CA, USA
fYear :
2012
fDate :
9-12 Sept. 2012
Firstpage :
1
Lastpage :
4
Abstract :
This paper proposes a new paradigm for coordination of lithography and design at advanced technology nodes. Growing complexity of technology without any lithography pitch reduction (knowing that we don´t have any imminent lens NA or wavelength improvement) we need to challenge node to node scaling more than any time before. To achieve an appropriate scale factor for 20nm and beyond it is necessary to introduce double patterning. We are going to explain how we change our landscape.
Keywords :
lithography; advanced technology nodes; design integration; double patterning; lens NA; lithography pitch reduction; node to node scaling; scale factor; technology architecture development; wavelength improvement; Color; Complexity theory; Computer architecture; Image color analysis; Libraries; Lithography; Metals; Design Technology Co-Optimization (DTCO); Lithography; Lithography Design Integration; Restricted Design Rules (RDR);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location :
San Jose, CA
ISSN :
0886-5930
Print_ISBN :
978-1-4673-1555-5
Electronic_ISBN :
0886-5930
Type :
conf
DOI :
10.1109/CICC.2012.6330685
Filename :
6330685
Link To Document :
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