• DocumentCode
    1807219
  • Title

    Lithography and design integration — New paradigm for the technology architecture development

  • Author

    Kye, Jongwook ; Ma, Yuansheng ; Yuan, Lei ; Deng, Yunfei ; Levinson, Harry

  • Author_Institution
    GLOBALFOUNDRIES, Sunnyvale, CA, USA
  • fYear
    2012
  • fDate
    9-12 Sept. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper proposes a new paradigm for coordination of lithography and design at advanced technology nodes. Growing complexity of technology without any lithography pitch reduction (knowing that we don´t have any imminent lens NA or wavelength improvement) we need to challenge node to node scaling more than any time before. To achieve an appropriate scale factor for 20nm and beyond it is necessary to introduce double patterning. We are going to explain how we change our landscape.
  • Keywords
    lithography; advanced technology nodes; design integration; double patterning; lens NA; lithography pitch reduction; node to node scaling; scale factor; technology architecture development; wavelength improvement; Color; Complexity theory; Computer architecture; Image color analysis; Libraries; Lithography; Metals; Design Technology Co-Optimization (DTCO); Lithography; Lithography Design Integration; Restricted Design Rules (RDR);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2012 IEEE
  • Conference_Location
    San Jose, CA
  • ISSN
    0886-5930
  • Print_ISBN
    978-1-4673-1555-5
  • Electronic_ISBN
    0886-5930
  • Type

    conf

  • DOI
    10.1109/CICC.2012.6330685
  • Filename
    6330685