• DocumentCode
    1807286
  • Title

    Statistical modeling based on back-end electric test data for improved IC process

  • Author

    Gu, Cong

  • Author_Institution
    DDL, Motorola China Electron. Ltd., Beijing, China
  • fYear
    2002
  • fDate
    19-21 Dec. 2002
  • Firstpage
    282
  • Lastpage
    286
  • Abstract
    This paper presents an efficient, accurate method for statistical MOSFET modeling to include effects of manufacturing process fluctuations. The variations of manufacturing process can be represented by the backend electric test data routinely which were used to monitor manufacturing performance. Determined casing limits with model casing definitions helps to set up several types of statistical process control limits to improve IC process and yield and provide easy use manner for circuit optimization. The results described in the paper are not only benefits to the circuit designers, and also are benefits to manufacturing process control. The relations of statistical models and Statistical Process Control are also discussed.
  • Keywords
    MOSFET circuits; circuit optimisation; semiconductor device models; statistical analysis; statistical process control; IC process; MOSFET modeling; back-end electric test data; backend electric test data; circuit design; circuit optimization; fabrication process fluctuations; statistical modeling; statistical process control; Circuit simulation; Circuit testing; Design optimization; Fluctuations; Integrated circuit modeling; Integrated circuit testing; Manufacturing processes; Process control; SPICE; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
  • Print_ISBN
    0-7803-7578-5
  • Type

    conf

  • DOI
    10.1109/SMELEC.2002.1217826
  • Filename
    1217826