Title :
Statistical modeling based on back-end electric test data for improved IC process
Author_Institution :
DDL, Motorola China Electron. Ltd., Beijing, China
Abstract :
This paper presents an efficient, accurate method for statistical MOSFET modeling to include effects of manufacturing process fluctuations. The variations of manufacturing process can be represented by the backend electric test data routinely which were used to monitor manufacturing performance. Determined casing limits with model casing definitions helps to set up several types of statistical process control limits to improve IC process and yield and provide easy use manner for circuit optimization. The results described in the paper are not only benefits to the circuit designers, and also are benefits to manufacturing process control. The relations of statistical models and Statistical Process Control are also discussed.
Keywords :
MOSFET circuits; circuit optimisation; semiconductor device models; statistical analysis; statistical process control; IC process; MOSFET modeling; back-end electric test data; backend electric test data; circuit design; circuit optimization; fabrication process fluctuations; statistical modeling; statistical process control; Circuit simulation; Circuit testing; Design optimization; Fluctuations; Integrated circuit modeling; Integrated circuit testing; Manufacturing processes; Process control; SPICE; Semiconductor device manufacture;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217826
