Title :
Analysis of Quantum Mechanical (QM) charge redistribution effects in MOSFETs on circuit performance
Author :
Mutlu, Ayhan A. ; Gunther, Norman G. ; Rahman, Mahmud
Author_Institution :
Dept. of Electr. Eng., Santa Clara Univ., CA, USA
Abstract :
In this work we present the QM charge redistribution effects in transistors on some circuit performance metrics such as delay and average power dissipation. The correction factors due to QM effects have been incorporated into the input variables of BSIM parameter extractor. The circuit performance effects of random dopant induced threshold voltage fluctuations are also presented. Monte Carlo methods have been utilized to analyze the circuit effects of these fluctuations.
Keywords :
CMOS integrated circuits; MOSFET circuits; Monte Carlo methods; current fluctuations; curve fitting; delay circuits; doping profiles; quantum theory; semiconductor device models; MOSFETs; Monte Carlo methods; delay; power dissipation; quantum mechanical charge redistribution effects; random dopant effects; threshold voltage fluctuations; Circuit analysis; Circuit optimization; Delay effects; Fluctuations; Input variables; MOSFETs; Performance analysis; Power dissipation; Quantum mechanics; Threshold voltage;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217827
