DocumentCode :
1807305
Title :
Increase of crosstalk noise due to imbalanced threshold voltage between NMOS and PMOS in sub-threshold logic circuits
Author :
Fuketa, Hiroshi ; Takahashi, Ryo ; Takamiya, Makoto ; Nomura, Masahiro ; Shinohara, Hirofumi ; Sakurai, Takayasu
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
fYear :
2012
fDate :
9-12 Sept. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Abnormal increase of the crosstalk noise in the sub-threshold logic circuits is found for the first time. When the threshold voltages (VTH) of nMOS and pMOS are imbalanced and the on-resistance of the aggressor driver is much lower than that of the victim driver, the large crosstalk noise is observed, because the on-resistance has an exponential dependence on VTH in the sub-threshold circuits. In this paper, the large crosstalk noise due to the imbalanced VTH is measured. A new crosstalk noise model is also proposed and verified with SPICE simulations. In a crosstalk noise test chip with 1.5-mm wire in a 40-nm CMOS at the power supply voltage (VDD) of 0.3V, the measured noise amplitude increases from 32% of VDD to 71% of VDD, when the imbalanced VTH is realized by tuning a body bias in pMOS. In the worst case fast-nMOS/slow-pMOS corner simulations, the noise amplitude increases from 47% of VDD to 68% of VDD, when VDD is reduced from 1.1V to 0.3V, which is explained by the proposed model.
Keywords :
CMOS logic circuits; MOSFET; crosstalk; driver circuits; CMOS process; NMOS transistor; PMOS transistor; SPICE simulations; aggressor driver; body bias; crosstalk noise model; crosstalk noise test chip; imbalanced threshold voltage; size 1.5 mm; size 40 nm; slow-pMOS corner simulations; subthreshold logic circuits; threshold voltages; victim driver; voltage 1.1 V to 0.3 V; wire; worst case fast-nMOS corner simulations; Crosstalk; MOS devices; Noise; Noise measurement; Semiconductor device measurement; Voltage measurement; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location :
San Jose, CA
ISSN :
0886-5930
Print_ISBN :
978-1-4673-1555-5
Electronic_ISBN :
0886-5930
Type :
conf
DOI :
10.1109/CICC.2012.6330689
Filename :
6330689
Link To Document :
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