Title :
Suppressing oxidization of hydrogen silsesquioxane films by using H 2O plasma in ashing process
Author :
Tamaoka, Eiji ; Ueda, Tetsuya ; Aoi, Nobuo ; Mayumi, Shuichi
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan
Abstract :
We have found that H2O plasma is very effective in suppressing degradation of HSQ (hydrogen silsesquioxane) films when removing photoresist from their surfaces. H2O plasma treatment causes little Si-H oxidization in HSQ films. Increases in the dielectric constant and leakage current of HSQ films treated by H2 O plasma is much smaller than those of films treated by O2 plasma
Keywords :
dielectric thin films; hydrogen compounds; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; organic compounds; oxidation; permittivity; photoresists; plasma materials processing; sputter etching; water; H2O; H2O plasma; H2O plasma ashing process; H2O plasma treatment; HSQ film degradation; HSQ films; O2 plasma; Si-H oxidation; dielectric constant; hydrogen silsesquioxane films; leakage current; oxidation suppression; photoresist removal; Degradation; Hydrogen; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Plasma waves; Resists; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704748
