Title :
A 160mV 670nW 8-bit SAR ADC in 0.13μm CMOS
Author :
Zhou, Xiong ; Li, Qiang
Author_Institution :
Centre for Commun. Circuits & Syst., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
An 8-bit SAR ADC capable of working under 160mV supply voltage is presented. To facilitate the ultra-low voltage comparator, a novel inverter-based amplifier is proposed and a dynamic latch with both gate and bulk driven input is exploited. An improved switching technique utilizing clock boosting and device stacking is employed for the ultra-low voltage sampling network. Implemented in a 0.13μm CMOS, the fabricated ADC works from 40kS/s to 400kS/s sampling rate under 160mV to 300mV supply voltage, respectively. Drawing 670nW from a single 160mV supply, the ADC achieves 0.5LSB DNL, 0.62LSB INL, 61.1dB SFDR and 7.3bit ENOB at a near-Nyquist input frequency of 19.7 kHz. To the best of authors´ knowledge, this is one of the lowest reported supply voltages in analog design.
Keywords :
CMOS integrated circuits; amplifiers; analogue-digital conversion; comparators (circuits); flip-flops; invertors; CMOS process; SAR ADC; analog design; clock boosting; device stacking; dynamic latch; frequency 19.7 kHz; improved switching technique; inverter-based amplifier; near-Nyquist input frequency; power 670 nW; size 0.13 mum; ultralow voltage comparator; ultralow voltage sampling network; voltage 160 mV to 300 mV; CMOS integrated circuits; Clocks; Gain; Latches; Logic gates; Switches; Voltage measurement;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2012 IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1555-5
Electronic_ISBN :
0886-5930
DOI :
10.1109/CICC.2012.6330693