Title :
MMIC development for Local Multipoint Distribution Service (LMDS)
Author :
Ariffin, Azzemi ; Jaafar, Salizul ; Bujan, Suhandi
Author_Institution :
Telekom Res. & Dev. Sdn. Bhd., UKM-MTDC, Selangor, Malaysia
Abstract :
This paper covers a few Monolithic Microwave Integrated Circuit (MMIC) design using the Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (p-HEMT) technology to be used in Local Multipoint Distribution Service (LMDS) system. Three different sections describe in brief the design approach and methodology involved in each RF circuit design especially in stabilizing circuitry and meeting the small and large signal specifications.
Keywords :
MMIC; gallium arsenide; high electron mobility transistors; integrated circuit design; GaAs; HEMT; MMIC development; RF circuit design; gallium arsenide; local multipoint distribution service; methodology; monolithic microwave integrated circuit design; pseudomorphic high electron mobility transistor; Electron mobility; Gallium arsenide; HEMTs; Integrated circuit technology; MMICs; MODFETs; Microwave integrated circuits; Microwave transistors; Monolithic integrated circuits; PHEMTs;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217832
