Integrated Schottky diodes for sub-millimeter and THz passive imaging: Influence of detector arrays topology

Author

Doussin, O. ; Bajon, D. ; Wane, S. ; Magnan, Pierre ; Parra, T.

Author_Institution

ISAE, Univ. de Toulouse, Toulouse, France

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

33

Lastpage

35

Abstract

This work investigates Silicon-based passive detectors in sub-millimeter and terahertz frequency range for imaging applications. Comparison of detection mechanisms related to the non-linear behavior of both MOSFET and Schottky Barrier Diodes (SBD) are discussed and figures of merit are introduced for their analysis. Influence of detector arrays geometric topology on their performances (Cutoff frequency, parasitic, Quality-factor, Sensitivity, Responsiveness, etc.) is studied based on careful experimental characterizations. Importance of proper Co-Design of Detector-Antenna system as a unified entity is underlined.

Keywords

MOSFET; Schottky diodes; elemental semiconductors; silicon; submillimetre wave antennas; submillimetre wave detectors; submillimetre wave diodes; submillimetre wave imaging; MOSFET; SBD; Si; THz passive imaging; detector array topology; detector-antenna system; integrated Schottky diodes; silicon-based passive detectors; submillimeter imaging; Antenna measurements; Antennas; Cutoff frequency; Detectors; Imaging; Schottky diodes; Topology; Detectors; Imaging; Schottky Diodes; THz;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489423

Filename

6489423