Title :
Strained quantum well heterostructure: modeling and simulation of 980 nm
Author :
Mun, Hung Yew ; Muhamad, Muhamad Rasat
Author_Institution :
Fac. of Eng. & Technol., Multimedia Univ., Melaka, Malaysia
Abstract :
The work concerns the study of a 980-nm strained quantum well (QW) laser diode which is suitable for pumping Er3+ doped fiber amplifiers. The concept of a strained QW in the design of the active layer of the laser diode is reviewed. A model of 980-nm strained multiple quantum-well (MQW) with InGaAs/GaAs active medium has been simulated. The simulation results include the comparison of optical gain between the transverse electric (TE) mode and transverse magnetic (TM) mode using carrier concentration as a parameter, the role of strain in QW and the field distribution across the direction of the epitaxial growth of heterostructure. Within the spectral range of 1.20-1.40 eV (wavelength 886-1034 nm), the results are reasonable and consistent with the basic principles employed in the optical properties of quantum well lasers.
Keywords :
carrier density; gallium arsenide; indium compounds; internal stresses; optical fibre amplifiers; optical pumping; quantum well lasers; semiconductor device models; semiconductor epitaxial layers; 886 to 1034 nm; Er; Er3+ doped fiber amplifiers; InGaAs-GaAs; InGaAs/GaAs active medium; carrier concentration; epitaxial growth; optical gain; optical properties; pumping; strain; strained quantum well heterostructure; strained quantum well laser diode; transverse electric mode; transverse magnetic mode; Diode lasers; Doped fiber amplifiers; Erbium; Gallium arsenide; Indium gallium arsenide; Laser excitation; Optical design; Optical pumping; Quantum well devices; Quantum well lasers;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217834