Title :
Modeling of TED of boron in the underlying silicon layer due to boron implantation
Author :
Sabki, S. Norfaezah ; Hashim, M.R. ; Aziz, Azlan A. ; Ashburn, P.
Author_Institution :
Sch. of Phys., Univ. Sains Malaysia, Penang, Malaysia
Abstract :
Ion implantation´s high selectivity played a very important role in forming active device region and low resistance ohmic contact for bipolar and CMOS transistors. However the process of annealing for dopant activation and repair, problems related to anomalous transient enhanced diffusion (TED) negate the benefits of ion implantation. The irregular dopant diffusion makes the realization of sharp and shallow junction devices difficult. It is therefore very important to model the TED in relation to the implantation energy before any realistic design of the transistor can be made. In this work, both experimental result from special structures with different implantation energies and process simulator SILVACO SILVACO is studied and used to model TED.
Keywords :
annealing; boron; diffusion; elemental semiconductors; ion implantation; semiconductor doping; semiconductor process modelling; silicon; CMOS transistors design; SILVACO simulation; Si:B; TED modeling; active device region; annealing; bipolar transistors; boron implantation; dopant activation; dopant diffusion; ion implantation; low resistance ohmic contact; silicon layer; transient enhanced diffusion; Annealing; Boron; Epitaxial layers; Implants; Ion implantation; Physics; Semiconductor device modeling; Semiconductor process modeling; Silicon; Solid state circuits;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217835