DocumentCode
1807896
Title
A retrospective on the SiGe HBT: What we do know, what we don´t know, and what we would like to know better
Author
Cressler, John D.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2013
fDate
21-23 Jan. 2013
Firstpage
81
Lastpage
83
Abstract
By any reasonable reckoning, SiGe HBT BiCMOS technology has “come of age,” as evidenced by a robust set of sources for SiGe fabrication around the world (including open foundries in the USA, Europe and Asia), multiple generational scaling nodes in production (3, soon to be 4), significant market penetration in a diverse set of performance-constrained analog, digital and RF systems, and recognized appeal for use in emerging mm-wave through near-THz electronic systems. In this retrospective on the SiGe HBT, I share a personal view of what we do know, what we don´t know, and what we would like to know better, from the perspective of materials, devices, technology, circuits, and applications.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; HBT BiCMOS technology; RF systems; SiGe; digital systems; market penetration; mm-wave through near-THz electronic systems; performance-constrained analog; CMOS integrated circuits; Heterojunction bipolar transistors; Performance evaluation; Robustness; Silicon; Silicon germanium; BiCMOS; HBT; Heterojunction bipolar transistor; SiGe; Silicon-Germanium; strained layer epitaxy;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location
Austin, TX
Print_ISBN
978-1-4673-1552-4
Electronic_ISBN
978-1-4673-1551-7
Type
conf
DOI
10.1109/SiRF.2013.6489439
Filename
6489439
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