• DocumentCode
    1807896
  • Title

    A retrospective on the SiGe HBT: What we do know, what we don´t know, and what we would like to know better

  • Author

    Cressler, John D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2013
  • fDate
    21-23 Jan. 2013
  • Firstpage
    81
  • Lastpage
    83
  • Abstract
    By any reasonable reckoning, SiGe HBT BiCMOS technology has “come of age,” as evidenced by a robust set of sources for SiGe fabrication around the world (including open foundries in the USA, Europe and Asia), multiple generational scaling nodes in production (3, soon to be 4), significant market penetration in a diverse set of performance-constrained analog, digital and RF systems, and recognized appeal for use in emerging mm-wave through near-THz electronic systems. In this retrospective on the SiGe HBT, I share a personal view of what we do know, what we don´t know, and what we would like to know better, from the perspective of materials, devices, technology, circuits, and applications.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; HBT BiCMOS technology; RF systems; SiGe; digital systems; market penetration; mm-wave through near-THz electronic systems; performance-constrained analog; CMOS integrated circuits; Heterojunction bipolar transistors; Performance evaluation; Robustness; Silicon; Silicon germanium; BiCMOS; HBT; Heterojunction bipolar transistor; SiGe; Silicon-Germanium; strained layer epitaxy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    978-1-4673-1552-4
  • Electronic_ISBN
    978-1-4673-1551-7
  • Type

    conf

  • DOI
    10.1109/SiRF.2013.6489439
  • Filename
    6489439