A design procedure for tunnel diode microwave oscillators

Author

Wang, Liquan ; Wasige, Edward

Author_Institution

Ultrafast Syst. Group, Glasgow Univ., Glasgow

Volume

2

fYear

2008

fDate

21-24 April 2008

Firstpage

832

Lastpage

834

Abstract

Negative differential resistance (NDR) devices such as Esaki tunnel diodes or resonant tunnelling diodes are ideal for the realisation of high frequency oscillators. However, the oscillation frequency cannot usually be predicted precisely and the output power is quite weak. In this paper, a tunnel diode oscillator topology to which the conventional negative resistance oscillator methodology can be employed is shown to yield predictable oscillation frequencies, delivering the maximum possible output power. Methods for DC and RF characterization of NDR devices are also described.

Keywords

microwave oscillators; network synthesis; network topology; tunnel diode oscillators; Esaki tunnel diodes; negative differential resistance devices; oscillator topology; resonant tunnelling diodes; tunnel diode microwave oscillators; Circuit testing; Diodes; Electrical resistance measurement; Microwave oscillators; Power generation; Power transmission lines; Radio frequency; Resonant tunneling devices; Transmission line measurements; Transmission line theory;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1879-4

Electronic_ISBN

978-1-4244-1880-0

Type

conf

DOI

10.1109/ICMMT.2008.4540529

Filename

4540529