Multi-gigabit 60 GHz OOK front-end in 90 nm CMOS

Author

Hamidian, Amin ; Malignaggi, Andrea ; Shu, Ran ; Kamal, A.M. ; Boeck, Georg

Author_Institution

Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

96

Lastpage

98

Abstract

In this work an on-off shift keying transmitter front-end for 60 GHz wireless communication is presented. To enhance the transmitter performance, a novel modulator topology is implemented. Designed and fabricated in 90 nm CMOS, the transmitter occupies 0.38 mm² and provides 8 dBm output power with 36 mW DC power consumption. The transmitter measurement in a complete 60 GHz wireless set-up showed more than 6 Gbit/s data rate over 4 m distance.

Keywords

CMOS integrated circuits; amplitude shift keying; low-power electronics; modulators; radio transmitters; CMOS integrated circuit; DC power consumption; distance 4 m; frequency 60 GHz; modulator topology; multigigabit OOK front-end; on-off shift keying transmitter front-end; power 36 mW; size 90 nm; wireless communication; CMOS integrated circuits; Gain; Modulation; Power generation; Transistors; Transmitters; Wireless communication; 60 GHz; 90 nm LP CMOS technology; High data rate wireless applications; OOK; Transmitter;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489444

Filename

6489444