Title :
Design and performance of a ultra-low-NF, high gain, linear LNA for 3GPP wireless node-B application
Author_Institution :
Centre for Dev. of Telematics, Bangalore, India
Abstract :
In this paper, we discuss the design methodology of a linear low noise amplifier (LNA) for optimum noise performance under good input match and reasonable output matching condition. Linearity is achieved with the use of balanced configuration and with overall high bias current gain of the LNA is optimised to be used in wideband code division multiple access (WCDMA) base-station receiver front-end. The balanced-cascade amplifier chain uses two E-pHEMT GaAsFET devices having gate widths of 800 μm and 6400 μm. Simulation performance shows an overall gain of 43 dB, noise figure less than 0.5 dB and third order intermodulation level (IMD3) better than -82 dBc under outdoor high-end mobile data rate of 384 kbps.
Keywords :
3G mobile communication; HEMT circuits; III-V semiconductors; UHF amplifiers; code division multiple access; gallium arsenide; intermodulation distortion; radio receivers; 3GPP; 6400 micron; 800 micron; E-pHEMT FET device; GaAs; IMD3; LNA; WCDMA; balanced-cascade amplifier chain; base-station receiver; bias current; linear low noise amplifier; optimisation; third order intermodulation; wideband code division multiple access; wireless node-B application; Broadband amplifiers; Design methodology; Impedance matching; Linearity; Multiaccess communication; Noise figure; Noise measurement; Performance gain; RF signals; Radio frequency;
Conference_Titel :
India Annual Conference, 2004. Proceedings of the IEEE INDICON 2004. First
Print_ISBN :
0-7803-8909-3
DOI :
10.1109/INDICO.2004.1497719
