Modeling and simulation of various p-DBR materials for 1.55 μm VCSELs diode

Author

Alias, Mohd Sharizal ; Kamaluddin, Burhanuddin ; Muhamad, Muhamad Rasat

Author_Institution

Dept. of Phys., Malaya Univ., Kuala Lumpur, Malaysia

fYear

2002

fDate

19-21 Dec. 2002

Firstpage

441

Lastpage

445

Abstract

Distributed Bragg Reflector (DBR) mirrors are key component in Vertical Cavity Surface Emitting Lasers (VCSELs) for 1.55 μm wavelength optical-fiber communication application. This paper presents modeling and simulation studies of p-DBR mirrors comprises from epitaxial mirrors such InGaAsP/InP and GaAs/AlGaAs, as well as dielectric mirror of novel combination like Si-C/MgO. Simulation results and analysis for the reflectivity spectrum and absorption coefficient are reported and compared for each material.

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; magnesium compounds; optical fibre communication; semiconductor device models; semiconductor epitaxial layers; semiconductor lasers; silicon compounds; surface emitting lasers; visible spectra; 1.5 micron; DBR materials; GaAs-AlGaAs; InGaAsP-InP; Si-C-MgO; VCSEL diode; absorption coefficient; dielectric mirror; distributed Bragg reflector mirrors; epitaxial mirrors; optical fiber communication; reflectivity spectrum; semiconductor device models; vertical cavity surface emitting lasers; Diodes; Distributed Bragg reflectors; Laser modes; Mirrors; Optical materials; Optical surface waves; Semiconductor process modeling; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on

Print_ISBN

0-7803-7578-5

Type

conf

DOI

10.1109/SMELEC.2002.1217861

Filename

1217861