Title :
Polymer light emitting diode made of poly(4,4´-diphenylene diphenylvinylene) and poly(9-vinylcarbazole) thin films
Author :
Mursyidah ; Salleh, M.M. ; Yahaya, M. ; Daik, R. ; Dzulfadli
Author_Institution :
Fac. of Sci. & Technol., Univ. Kebangsaan Malaysia, Selangor, Malaysia
Abstract :
The polymer light emitting device with ITO/PVK/PDPV/Al structure was fabricated. Poly(9-vinylcarbazole), PVK, thin films were used as hole transport layer and poly (4,4´-diphenylene diphenylvinylene), PDPV, as a luminescent layer, respectively. Indium Tin Oxide (ITO) and Aluminum (Al) thin films were used as positive and negative electrode, respectively. It was found that the device required the turn-on voltage of 8.0 V to obtain a current density of 0.1 mA/cm2. The maximum brightness obtained was in excess of 900 cd/m2. The lifetime of the device has been achieved exceeding 5.0 hours operating at 11.0 V.
Keywords :
aluminium; brightness; current density; indium compounds; organic light emitting diodes; polymer films; thin film devices; tin compounds; 11.0 V; 5 hour; 8.0 V; ITO-Al; ITO/PVK/PDPV/Al structure; InSnO-Al; PVK thin films; aluminum films; brightness; device lifetime; electrode; hole transport layer; indium tin oxide films; luminescent layer; poly(4,4´-diphenylene diphenylvinylene); poly(9-vinylcarbazole) thin films; polymer light emitting device; polymer light emitting diode; Artificial intelligence; Electrodes; Glass; Indium tin oxide; Light emitting diodes; Optical films; Organic light emitting diodes; Polymer films; Solvents; Wavelength measurement;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217865
