DocumentCode :
1808357
Title :
Effect of annealing and alloying to the microstructural property of gold bond wire in wire bond interconnect
Author :
Omar, Ghazali ; Muhamad, Muhamad Rasat ; Daud, Ali
Author_Institution :
Dept. of Phys., Malaya Univ., Kuala Lumpur, Malaysia
fYear :
2002
fDate :
19-21 Dec. 2002
Firstpage :
480
Lastpage :
484
Abstract :
This paper investigates the microstructural and mechanical properties of gold and copper that influence bondability performance and junction reliability of wire bond interconnect. The bond wire microstructural and mechanical properties can be controlled by the annealing process to establish the effect of recovery, grain growth and the recrystallization. The addition of 1% palladium to gold wire has improved recrystallization temperature from 350°C to 550°C.
Keywords :
alloying; annealing; copper; ductility; elongation; gold; grain growth; integrated circuit bonding; integrated circuit interconnections; lead bonding; palladium; recrystallisation; reliability; tensile strength; Au-Pa-Cu; alloying; annealing; copper; gold bond wire; grain growth; junction reliability; mechanical properties; microstructure; palladium; recrystallization; wire bond interconnect; Alloying; Annealing; Bonding; Copper; Gold; Mechanical factors; Physics; Softening; Temperature; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
Type :
conf
DOI :
10.1109/SMELEC.2002.1217870
Filename :
1217870
Link To Document :
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