Reliability characterization of a 0.6 μm FLOTOX EPROM process

Experimental data is presented and then discussed covering four reliability parameters specific to FLOTOX EEPROM cells, namely the memory cell cycle endurance, the data retention, the tunnel oxide integrity and the ONO integrity. Measurements of cell cycle endurance have been made up to 12 million cycles covering different programming voltages, different programming pulse widths as well as different programming waveforms. Data retention test were carried out on the EEPROM cells and statistical gate oxide integrity test have been conducted on the tunnel oxide and the ONO layers.