A 26 dBm output power SiGe power amplifier for mobile 16 QAM LTE applications

Author

Geunyong Lee ; Jonghun Jung ; Jong-In Song

Author_Institution

Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2013

fDate

21-23 Jan. 2013

Firstpage

132

Lastpage

134

Abstract

This paper presents a silicon germanium (SiGe) HBT power amplifier (PA) for mobile long term evolution (LTE) applications. The PA consists of a 2-stage cascade structure for high gain and 3 matching networks; input, inter-stage, and output matching network. The matching networks were designed to have a reduced insertion loss and size. The PA is fabricated using 0.35μm SiGe BiCMOS technology with a low inductance through-silicon-via (TSV). The PA a gain of 28.5dB, a PAE of 26.6%, an EVM of 2.8%, and an ACLR1 of -32.5 dBc at the output power of 26 dBm for 10MHz BW 16 QAM LTE signals.

Keywords

Long Term Evolution; mobile radio; power amplifiers; quadrature amplitude modulation; ACLR1; BW 16 QAM LTE signals; HBT power amplifier; SiGe; TSV; frequency 10 MHz; low inductance through- silicon-via; mobile 16 QAM LTE application; mobile Long Term Evolution application; output matching network; size 0.35 mum; Heterojunction bipolar transistors; Impedance matching; Long Term Evolution; Mobile communication; Power amplifiers; Power generation; Silicon germanium; SiGe HBT; mobile LTE applications; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on

Conference_Location

Austin, TX

Print_ISBN

978-1-4673-1552-4

Electronic_ISBN

978-1-4673-1551-7

Type

conf

DOI

10.1109/SiRF.2013.6489456

Filename

6489456