DocumentCode :
1808452
Title :
14.4mW 10Gbps CMOS limiting amplifier with local DC offset cancellers
Author :
Takano, Kyoya ; Fujimoto, Richard ; Motoyoshi, Mizuki ; Katayama, Kengo ; Fujishima, Minoru
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
fYear :
2013
fDate :
21-23 Jan. 2013
Firstpage :
135
Lastpage :
137
Abstract :
A low-power limiting amplifier (LA) with DC offset cancellers (DCOCs) using local feedback loops is presented for D-band wireless transceivers. The number of cascaded stages of amplifiers is set to minimize the gain-bandwidth product (GBW) of each amplifier that has the required bandwidth to realize low power dissipation. The capacitance used in each DCOC is reduced by the local feedback loops. In addition, the area used by the capacitors in each DCOC is reduced by arranging metal-oxide-metal (MOM) capacitors on MOS capacitors. Moreover, a push-pull-type topology using only NMOSs is used as an output buffer to reduce the power dissipation. Furthermore, an inductive peaking technique is used for amplifiers to realize a large bandwidth. The proposed LA has been fabricated by a 40nm CMOS process. It has a differential voltage gain of 45dB, a bandwidth of approximately 6.5GHz, a power dissipation of 14.4mW, and a circuit area of 0.15mm2. It can operate with a data rate of 10Gbps.
Keywords :
CMOS integrated circuits; MOS capacitors; field effect MMIC; low-power electronics; microwave amplifiers; CMOS limiting amplifier; CMOS process; D-band wireless transceivers; MOM capacitors; bit rate 10 Gbit/s; gain 45 dB; gain-bandwidth product; inductive peaking; local DC offset cancellers; local feedback loops; low power dissipation; low-power limiting amplifier; metal-oxide-metal capacitors; power 14.4 mW; push-pull-type topology; size 40 nm; Bandwidth; CMOS integrated circuits; Capacitors; Limiting; Power dissipation; Receivers; Wireless communication; CMOS; DC offset canceller; amplifier array; limiting amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
Type :
conf
DOI :
10.1109/SiRF.2013.6489457
Filename :
6489457
Link To Document :
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