Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure at cryogenic temperatures

Author

Donato, N. ; Caddemi, A. ; Crupi, G. ; Calandra, E.

Author_Institution

Dipt. di Fisica della Materia e Tecnologie Fisiche Avanzate, Messina Univ., Italy

Volume

3

fYear

2004

fDate

18-20 May 2004

Firstpage

2208

Abstract

In the present work we employ a direct extraction procedure to determine small signal equivalent circuit of microwave GaAs FETs by means of scattering (S-) parameter measurements down to cryogenic temperatures. The direct extraction procedure was tested on packaged AlGaAs/InGaAs HEMTs and good agreement between the simulated and measured S-parameters was obtained at different bias and temperature conditions. We employed a properly designed cryogenic set-up operating in our laboratory that allows to perform DC and RF characterization down to 30 K.

Keywords

III-V semiconductors; S-parameters; circuit analysis computing; cryogenic electronics; equivalent circuits; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; 30 K; DC characterization; RF characterization; cryogenic temperatures; direct extraction procedure; fully automated tool; microwave characterization; modeling; packaged HEMT; scattering parameter measurements; small signal equivalent circuit; Cryogenics; Equivalent circuits; FETs; Gallium arsenide; HEMTs; MODFETs; Microwave measurements; Packaging; Scattering parameters; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE

ISSN

1091-5281

Print_ISBN

0-7803-8248-X

Type

conf

DOI

10.1109/IMTC.2004.1351529

Filename

1351529