Title :
XRD characterization of the MBE grown Si:GaAs, GaAs, AlGaAs, and InGaAs epilayer
Author :
Fu, Dee Chang ; Jusoh, Mohd Sazli ; Mat, Abdul Fatab Awang ; Majlis, Burhanuddin Yeop
Author_Institution :
TM Microelectron. Res. Centre, Univ. Kebangsaan Malaysia, Selangor, Malaysia
Abstract :
The molecular beam epitaxial growth of Si-doped GaAs, GaAs buffer layer, Al0.3Ga0.7As (x=0.3) and InxGa1-xAs (x=0.2-0.4) on GaAs(100) substrate were examined by X-ray diffraction. Crystallinity of each layer was compared for each sample. The x composition value calculated from the In flux for InGaAs layers were compared to value obtained from X-ray diffraction matching to the Vegard Law/Fournet model curves to obtain the lattice parameters.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; indium compounds; lattice constants; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; AlGaAs:Si; Fournet model curves; GaAs; GaAs buffer layer; GaAs:Si; InGaAs layers; InGaAs:Si; MBE; Si doped GaAs; Vegard law; X-ray diffraction; XRD; crystallinity; epilayer; lattice parameters; molecular beam epitaxial growth; Buffer layers; Crystallization; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Ovens; Substrates; Temperature; X-ray diffraction; X-ray scattering;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217876
