Title :
The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness
Author :
Noor, Mimiwaty Mohd ; Bais, Badariah ; Majlis, Burhanuddin Yeop
Author_Institution :
Fac. of Eng., Univ. Kebangasaan Malaysia, Selangor, Malaysia
Abstract :
The characterization of the KOH aqueous solution was done in order to study the effects of temperature and KOH concentration on the silicon etching rate for membrane formation. The study was done for temperatures ranging from 65°C to 80°C and KOH concentration ranging from 15% to 55%. Experiments showed that the temperature of 80°C and KOH concentration of 35% will yield the optimum etching rate with the minimum surface roughness. A silicon membrane of thickness 48 μm was produced with KOH concentration of 35% at the temperature of 75°C for 7 hours and 45 minutes and the etching profile analyzed.
Keywords :
elemental semiconductors; etching; potassium compounds; silicon; surface roughness; 465 min; 48 micron; 65 to 80 degC; KOH; KOH concentration; Si; membrane surface roughness; silicon etching rate; Anisotropic magnetoresistance; Biomembranes; Etching; Heating; Resists; Rough surfaces; Silicon; Surface roughness; Temperature dependence; Temperature distribution;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217878
