The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness

Author

Noor, Mimiwaty Mohd ; Bais, Badariah ; Majlis, Burhanuddin Yeop

Author_Institution

Fac. of Eng., Univ. Kebangasaan Malaysia, Selangor, Malaysia

fYear

2002

fDate

19-21 Dec. 2002

Firstpage

524

Lastpage

528

Abstract

The characterization of the KOH aqueous solution was done in order to study the effects of temperature and KOH concentration on the silicon etching rate for membrane formation. The study was done for temperatures ranging from 65°C to 80°C and KOH concentration ranging from 15% to 55%. Experiments showed that the temperature of 80°C and KOH concentration of 35% will yield the optimum etching rate with the minimum surface roughness. A silicon membrane of thickness 48 μm was produced with KOH concentration of 35% at the temperature of 75°C for 7 hours and 45 minutes and the etching profile analyzed.

Keywords

elemental semiconductors; etching; potassium compounds; silicon; surface roughness; 465 min; 48 micron; 65 to 80 degC; KOH; KOH concentration; Si; membrane surface roughness; silicon etching rate; Anisotropic magnetoresistance; Biomembranes; Etching; Heating; Resists; Rough surfaces; Silicon; Surface roughness; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on

Print_ISBN

0-7803-7578-5

Type

conf

DOI

10.1109/SMELEC.2002.1217878

Filename

1217878