Title :
Effect of vanadium doping on the semiconducting properties of La0.67Ca0.33MnO3 ceramics
Author :
Halim, Shahliza A. ; Lim, K.P. ; Chow, S.P. ; Zainuddin, Hedzlin ; Koh, S.F. ; Chik, Abdullah
Author_Institution :
Dept. of Phys., Univ. Putra Malaysia, Selangor, Malaysia
Abstract :
Manganites perovskite compound exhibit the transition of semiconducting to metallic conductivity at TP and the magnetic properties observed in the χ´-temperature curves show transition from paramagnetic to ferromagnetic at TC. The coexistence of TC and TP are due to the double exchange interaction of two electrons in Mn3+-O2--Mn4+ and Mn4+-O2--Mn3+ configuration which brings the system below TC into a metallic state. Hence it is observed that the Curie temperature TC is closely related to the sharp decrease in the electrical resistivity of the samples. However, both transition temperatures shift to lower temperature as vanadium doping increases indicating the loss of ferromagnetic order and transport properties. As for the transport properties the semiconductor model ln(σ)∼(Ea/kT) was used to explain the conduction mechanism of perovskite manganites above TP. It was concluded that the total conductivity, σtot, consists of the intrinsic and the extrinsic components, such that σtot=σint+σext. The total activation energy increases initially from 0.150 eV to maximum value of 0.228 eV at x=0.01 and decreases to 0.1 eV at the composition of x=0.30.
Keywords :
Curie temperature; calcium compounds; ceramics; electrical conductivity transitions; electrical resistivity; ferromagnetic materials; ferromagnetic-paramagnetic transitions; lanthanum compounds; magnetic susceptibility; metal-insulator transition; paramagnetic materials; semiconductor doping; semiconductor materials; superexchange interactions; vanadium; Curie temperature; La0.67Ca0.33MnO3:V; activation energy; ceramics; double exchange interaction; electrical resistivity; ferromagnetic order loss; ferromagnetic temperature; magnetic properties; manganites perovskite compound; paramagnetic temperature; semiconducting properties; semiconductor conductivity; semiconductor metal transition; transport properties; vanadium doping effect; Conductivity; Electric resistance; Electrons; Elementary particle exchange interactions; Magnetic properties; Mechanical factors; Paramagnetic materials; Semiconductivity; Semiconductor device doping; Temperature;
Conference_Titel :
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on
Print_ISBN :
0-7803-7578-5
DOI :
10.1109/SMELEC.2002.1217880