BIST-Assisted Tuning Scheme for Minimizing IO-Channel Power of TSV-Based 3D DRAMs

Three-dimensional dynamic random access memory (3D DRAM) using through-silicon via (TSV) has been acknowledged as one good approach for overcoming the memory wall. However, the IO-channel power of a TSV-based 3D DRAM represents a significant portion of the 3D DRAM power. In this paper, we propose a built-in self-test (BIST) -assisted tuning scheme to adjust the driving capability of programmable drivers to fit the number of stacked 3D DRAM dies such that the IO-channel power can be minimized. A BIST design supporting specific test patterns and test flow for the driver tuning is proposed as well. Simulation results show that about 6.16×10 -- 2 J energy saving can be achieved for a logic-DRAM stack with 150fF/die TSV load under 100s write operations if the proposed BIST-assisted tuning scheme is implemented in the logic die.