Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors

Author

Paolucci, Giovanni M. ; Compagnoni, C. Monzio ; Castellani, N. ; Carnevale, G. ; Fantini, P. ; Ventrice, D. ; Lacaita, Andrea L. ; Spinelli, Alessandro S. ; Benvenuti, A.

Author_Institution

Dipt. di Elettron., Inf. e Bioingegneria, Inf. e Bioingegneria, Milan, Italy

Volume

34

Issue

5

fYear

2013

fDate

May-13

Firstpage

629

Lastpage

631

Abstract

This letter presents a detailed experimental investigation of the current-voltage characteristics of deca-nanometer gated-thyristors, highlighting that strong differences exist between the static and the dynamic operation of these devices. In particular, results reveal that the forward-breakover voltage determining thyristor turn-on does not depend only on the applied gate voltage, but also on the rise time of the applied gate pulse, decreasing for fast pulse fronts. This is explained in terms of a higher electron injection from the cathode to the anode triggering device turn-on when the gate switching time is shorter than that required for holes to leave the p-base.

Keywords

nanoelectronics; thyristors; anode triggering device; applied gate pulse; cathode; current-voltage characteristic dynamic analysis; deca-nanometer gated-thyristors; electron injection; fast pulse fronts; forward-breakover voltage; gate switching time; nanoscale gated-thyristors; thyristor turn-on; Forward-breakover; nanoscale semiconductor devices; semiconductor-device modeling; thyristors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2253441

Filename

6497489