Title :
Built-In Scrambling Analysis for Yield Enhancement of Embedded Memories
Author :
Shyue-Kung Lu ; Hao-Cheng Jheng ; Hao-Wei Lin ; Hashizume, Masaki ; Kajihara, Seiji
Author_Institution :
Dept. Electr. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
Abstract :
Fault scrambling technique is considered a promising way to distribute faulty bits into different code words such that the number of faulty cells in each codeword is below the protection capability of the adopted EDAC coding techniques. However, the effectiveness of the scrambling technique depends on the determination of the row/column scrambling control words. Therefore, we propose a heuristic algorithm suitable for built-in implementation for the evaluation of control words based on the fault bitmap and the specifications of the memory. The corresponding built-in scrambling analysis (BISA) circuit is also proposed. The BISA module can be easily integrated into the conventional built-in self-repair (BISR) module. A simulator is developed to evaluate the hardware overhead and repair rate. According to experimental results, the repair rate can be improved significantly with negligible hardware overhead.
Keywords :
built-in self test; error correction codes; error detection codes; fault diagnosis; integrated circuit reliability; integrated circuit yield; integrated memory circuits; modules; BISA circuit; BISR module; EDAC coding technique; built-in scrambling analysis; built-in self-repair module; codeword; embedded memory; error detection and correction; fault bitmap; fault scrambling technique; faulty bit distribution; faulty cell; hardware overhead evaluate; heuristic algorithm; memory specification; protection capability; repair rate; row-column scrambling control word; yield enhancement; Algorithm design and analysis; Arrays; Built-in self-test; Circuit faults; Hardware; Maintenance engineering; Registers; Fault scrambling; Reliability; Repair; Yield;
Conference_Titel :
Test Symposium (ATS), 2014 IEEE 23rd Asian
Conference_Location :
Hangzhou
DOI :
10.1109/ATS.2014.41