Title :
A 4-bit SiGe passive phase shifter for X-band phased arrays
Author :
Kalyoncu, I. ; Ozeren, Emre ; Kaynak, Mehmet ; Gurbuz, Yasar
Author_Institution :
Fac. of Eng. & Natural Sci. - FENS, Sabanci Univ., Istanbul, Turkey
Abstract :
This paper presents a 4-bit passive phase shifter for X-band (8-12 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process. All bits are digitally controlled. The 22.5° and 45° bits are based on switched low-pass network while the 90° and 180° bits are based on switching between high-pass/low-pass filters. Filters are implemented using on-chip spiral inductors and high-Q MIM capacitors. Switching functionality is obtained by isolated NMOS transistors employing resistive body floating technique. All bits are optimized to minimize the RMS phase error. Ordering of bits is optimized so as to minimize the overall insertion loss. Simulated insertion loss is 12±2 dB and RMS phase error is less than 2° over X-band frequencies.
Keywords :
Ge-Si alloys; MOSFET; antenna phased arrays; bipolar MMIC; high-pass filters; inductors; low-pass filters; microwave phase shifters; NMOS transistors; RMS phase error; SiGe; SiGe BiCMOS process; SiGe passive phase shifter; X-band phased arrays; frequency 8 GHz to 12 GHz; high-Q MIM capacitors; high-pass filters; low-pass filters; on-chip spiral inductors; resistive body floating technique; size 0.25 mum; switched low-pass network; word length 4 bit; BiCMOS integrated circuits; Frequency measurement; Insertion loss; Loss measurement; Phase measurement; Phase shifters; Silicon germanium; Phase shifter; SiGe BiCMOS; T/R module; X-band; phased array;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2013 IEEE 13th Topical Meeting on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-1552-4
Electronic_ISBN :
978-1-4673-1551-7
DOI :
10.1109/SiRF.2013.6489482
