Title :
Gain and frequency controllable sub-1 V 5.8 GHz CMOS LNA
Author :
Tsang, Tommy K K ; El-Gamal, Mourad N.
Author_Institution :
Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada
Abstract :
This paper presents the design and experimental results of a low-voltage low noise amplifier (LNA) with gain and frequency control in a standard 0.18 μm CMOS process. Targeting at a center frequency of 5.8 GHz with a supply voltage of 1 V, the LNA exhibits a power gain of 13.2 dB with a noise figure of 2.5 dB. The circuit has over 10 dB of gain tuning, and 360 MHz of frequency tuning, and can operate at a supply voltage as low as 0.7 V.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; VLSI; circuit tuning; integrated circuit design; low-power electronics; 0.18 micron; 0.7 to 1 V; 13.2 dB; 2.5 dB; 5.8 GHz; CMOS; LNA; RFICs; frequency control; gain tuning; low noise amplifier; low-voltage ICs; power gain; supply voltage; CMOS process; Circuit noise; Circuit topology; Frequency; Gain; Impedance matching; Inductors; Low voltage; Noise figure; Radiofrequency integrated circuits;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1010577
