Title :
Chemical mechanical polishing of aluminum for the 0.18 μm dual damascene process
Author :
Kordic, S. ; Mutsaers, C.A.H. ; Lifka, H. ; Webster, M.N.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Chemical mechanical polishing of aluminum is used for the 0.18 μm aluminum dual damascene process. Issues concerning the choice of slurry are discussed. Initial results show a yield of 80% on 3.15 m long and 0.4 μm wide damascene lines. Comb structures have no shorts. At the same time, no Al line dishing was observed. The end-point-detection system on the Applied Materials MIRRA CMP tool is discussed
Keywords :
aluminium; chemical mechanical polishing; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit yield; 0.18 micron; 0.4 micron; 3.15 m; Al; Al line dishing; Applied Materials MIRRA CMP tool; CMP slurry; CMP yield; aluminum; aluminum dual damascene process; chemical mechanical polishing; comb structures; damascene lines; dual damascene process; end-point-detection system; Aluminum; Artificial intelligence; Chemical processes; Chemical technology; Copper; Corrosion; Etching; Integrated circuit interconnections; Planarization; Slurries;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704754
