• DocumentCode
    1809147
  • Title

    Influence of different piezoelectric materials and thicknesses on the performance of stacked crystal film bulk acoustic wave filters

  • Author

    Chu, He-qun ; Chen, Jian-Ming ; Wu, Guang-min ; Yao, Jun ; Zhou, Ying

  • Author_Institution
    MEMS Lab., Kunming Univ. of Sci. & Technol., Kunming, China
  • fYear
    2009
  • fDate
    17-20 Dec. 2009
  • Firstpage
    100
  • Lastpage
    100
  • Abstract
    Stacked crystal film bulk acoustic wave filters (SCFBAF) have obvious advantages over other filters (such as ladder-type filters, coupled resonator filters, etc.), including low insertion loss, small size and high stop-band attenuation, working in super high operating frequencies, etc. This paper presents the design and simulation of a six layers of SCFBAF. Structure of SCFBAF is illustrated and properties of three kinds of piezoelectric materials (lead zirconate titanate, zinc oxide and aluminum nitride) are compared. Amplitude-frequency curves of SCFBAF with different piezoelectric materials and thicknesses are obtained by using ANSYS 11.0. Based on the simulation results, analyses of performances of SCFBAF are stated. Finally relationships among performance, thickness and materials are concluded. The research results are valuable for design, fabrication and measurement of next generation complex RF MEMS filters.
  • Keywords
    II-VI semiconductors; III-V semiconductors; aluminium compounds; bulk acoustic wave devices; lead compounds; micromechanical devices; piezoelectric semiconductors; radiofrequency filters; stack filters; surface acoustic wave resonator filters; wide band gap semiconductors; zinc compounds; ANSYS 11.0; AlN; PZT; ZnO; aluminum nitride; amplitude-frequency curves; complex RF MEMS filters; coupled resonator filters; insertion loss; ladder-type filters; lead zirconate titanate; piezoelectric materials; stacked crystal film bulk acoustic wave filters; stop-band attenuation; zinc oxide; Acoustic waves; Attenuation; Film bulk acoustic resonators; Frequency; Insertion loss; Lead compounds; Piezoelectric films; Piezoelectric materials; Resonator filters; Titanium compounds; FBAR; RF-MEMS; mobile device; piezoelectric film; stacked crystal filters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA) and 2009 China Symposium on Frequency Control Technology, Joint Conference of the 2009 Symposium on
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-4950-7
  • Type

    conf

  • DOI
    10.1109/SPAWDA.2009.5428872
  • Filename
    5428872