Title :
A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS
Author :
Bergervoet, J. ; Leenaerts, D. ; de Jong, G. ; van der Heijden, E. ; Lobeek, J.-W. ; Simin, A.
Author_Institution :
RF ADT, NXP Semicond., Eindhoven, Netherlands
Abstract :
A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; cellular radio; code division multiple access; low noise amplifiers; BiCMOS; OIP3 WCDMA LNA; SiGe:C; WCDMA cellular infrastructure application; current 197 mA; frequency 1.92 GHz to 1.98 GHz; silicon integrated LNA; temperature 27 C; temperature 65 C; two-die MMIC; voltage 5 V; Attenuators; Gain; Gain measurement; Linearity; Noise measurement; Radio frequency; Temperature measurement;
Conference_Titel :
ESSCIRC (ESSCIRC), 2011 Proceedings of the
Conference_Location :
Helsinki
Print_ISBN :
978-1-4577-0703-2
Electronic_ISBN :
1930-8833
DOI :
10.1109/ESSCIRC.2011.6044948
