A 1.95GHz sub-1dB NF, +40dBm OIP3 WCDMA LNA with variable attenuation in SiGe:C BiCMOS

Author

Bergervoet, J. ; Leenaerts, D. ; de Jong, G. ; van der Heijden, E. ; Lobeek, J.-W. ; Simin, A.

Author_Institution

RF ADT, NXP Semicond., Eindhoven, Netherlands

fYear

2011

fDate

12-16 Sept. 2011

Firstpage

227

Lastpage

230

Abstract

A silicon integrated LNA for WCDMA cellular infrastructure applications, e.g. base stations will be demonstrated. The LNA is designed for the 1.92-1.98GHz band and reaches a 0.7dB NF at 27°C and 1.1 at 65°C. The output IP3 is +40dBm at 27°C and +37dBm at 65°C while having input and output return loss better than 20dB. A bypass mode and variable attenuation is also provided to cope with large input signals. The two-die MMIC is packaged on a single laminate. The total solution consumes a maximum of 197mA from a 5V supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; cellular radio; code division multiple access; low noise amplifiers; BiCMOS; OIP3 WCDMA LNA; SiGe:C; WCDMA cellular infrastructure application; current 197 mA; frequency 1.92 GHz to 1.98 GHz; silicon integrated LNA; temperature 27 C; temperature 65 C; two-die MMIC; voltage 5 V; Attenuators; Gain; Gain measurement; Linearity; Noise measurement; Radio frequency; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

ESSCIRC (ESSCIRC), 2011 Proceedings of the

Conference_Location

Helsinki

ISSN

1930-8833

Print_ISBN

978-1-4577-0703-2

Electronic_ISBN

1930-8833

Type

conf

DOI

10.1109/ESSCIRC.2011.6044948

Filename

6044948